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The UTC 24NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.
$ 14.84000 14.840000000000002 USD
The UTC UTG20N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG20N65-S is suitable for the resonant or soft switching applications.
$ 7.20000 7.2 USD
The UTC UTG20N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG20N65-S is suitable for the resonant or soft switching applications.
$ 4.60000 4.6000000000000005 USD
The UTC UT03P06 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT03P06 is suitable for high voltage switching applications.
$ 0.26000 0.26 USD
The UTC UG15N41 is a Logic Level Insulated Gate Bipolar Transistor features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, etc. The UTC UG15N41 is suitable for AC and DC motor controls, power supplies, and drivers for solenoids, relays and contactors, etc.
$ 4.60000 4.6000000000000005 USD
The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications.
$ 3.60000 3.6 USD
The UTC MBR1100 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop, low reverse current and high efficiency, etc. The UTC MBR1100 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diodes.
$ 0.38000 0.38 USD
The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
$ 0.68000 0.68 USD
The UTC UTZ24N is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTZ24N is suitable for high efficiency synchronous rectification in SMPS, primary side switch and telecom bricks.
$ 1.86000 1.86 USD
The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UF5210 is suitable for all commercial-industrial applications, etc.
$ 5.20000 5.2 USD
The UTC UF640-HC is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UF640-HC is universally applied in low voltage such as automotive, high efficiency switching for AC/DC converters and DC motor control, etc.
$ 5.30000 5.300000000000001 USD
The UTC UT150N06H uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as high current switching applications.
$ 5.60000 5.6000000000000005 USD
The UTC UTT15N10M-Q is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology. The UTC UTT15N10M-Q is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
$ 1.72000 1.7200000000000002 USD
The UTC SK34 is a Schottky Rectifier with high current capacity, ultra low thermal resistance, Low reverse leakage and low forward voltage. The UTC SK34 is suitable for surface mount applications.
$ 0.60000 0.6000000000000001 USD
The UTC UTT80N10H is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge, etc. The UTC UTT80N10H applies to primary side switch, synchronous rectifier, Motor Drives, etc.
$ 4.60000 4.6000000000000005 USD
The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields.
$ 0.92000 0.92 USD
The UTC SK24 is a Schottky Rectifier with high current capacity, ultra low thermal resistance, Low reverse leakage and low forward voltage. The UTC SK24 is suitable for surface mount applications.
$ 0.50000 0.5 USD
The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400 is optimized for applications, such as a load switch or in PWM.
$ 0.44000 0.44000000000000006 USD
The UTC UT5N04M is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits
$ 0.50000 0.5 USD
The UTC US1M is a surface mount ultra fast rectifier, it uses UTC’s advanced technology to provide customers with ultra fast switching, high forward surge current and low reverse leakage, etc. The UTC US1M is suitable for surface mounted applications.
$ 0.30000 0.30000000000000004 USD